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VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral SOURCE-DRAIN diode High input impedance and high gain Complementary N- and P-Channel devices
General Description
The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Device VN0550N3 VN0550N3-G Package BVDSS/BVDGS
(V)
RDS(ON)
(max) ()
ID(ON)
(min) (mA)
TO-92
500
60
150
-G indicates package is RoHS compliant (`Green')
Absolute Maximum Ratings
Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS 20V -55C to +150C +300C
Pin Configuration
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Notes: 1. Distance of 1.6mm from case for 10 seconds.
S GD
TO-92
(front view)
VN0550
Electrical Characteristics (T = 25C unless otherwise specified)
A
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS
Parameter Drain-to-source breakdown voltage Gate threshold voltage Change in VGS(th) with temperature Gate body leakage current Zero gate voltage drain current
Min 500 2.0 150 50 -
Typ -3.8 100 350 45 40 1.0 100 45 8.0 2.0 0.8 300
Max 4.0 -5.0 100 10 1.0 60 1.7 55 10 5.0 10 15 10 10 -
Units V V mV/OC nA A mA mA
Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating, TA = 125OC VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA VGS = 0V, VDS = 25V, f = 1.0MHz
ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
ON-state drain current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON time Rise time Turn-OFF time Fall time Diode forward voltage drop Reverse recovery time
%/ C mmho pF
O
ns
VDD = 25V, ID = 150mA, RGEN = 25 VGS = 0V, ISD = 500mA VGS = 0V, ISD = 500mA
V ns
Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Thermal Characteristics
Device VN0550 Package TO-92 ID (continuous)*
(mA)
ID (pulsed)
(mA)
Power Dissipation @TC = 25OC
(W)
( C/W)
O
JC
(OC/W)
JA
IDR*
(mA)
IDRM
(mA)
50
250
1.0
125
170
50
250
Notes: * ID (continuous) is limited by max rated TJ.
Switching Waveforms and Test Circuit
10V
VDD RL OUTPUT
90% INPUT
0V
10%
t(ON)
PULSE GENERATOR
t(OFF) tr td(OFF) tF
RGEN
td(ON)
VDD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
VN0550
Typical Performance Curves
Output Characteristics
0.5 VGS = 10V 0.25
Saturation Characteristics
8V
0.4 0.20
6V
VGS = 10V
8V 6V
ID (amperes)
0.3
ID (amperes)
0.15
0.2
0.10
0.1
0.05
4V 4V
0 0 10 20 30 40 50 0 0 2 4 6 8 10
VDS (volts) Transconductance vs. Drain Current
0.40 10
VDS (volts) Power Dissipation vs. Case Temperature
VDS = 25V
0.32 8
GFS (siemens)
0.16
TA = 25C
PD (watts)
0.24
TA = -55C
6
4
0.08
TA = 125C
2 TO-92
0 0 0.1 0.2 0.3 0.4 0.5
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
1.0 1.0
TC (C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
ID (amperes)
0.1
0.6
TO-92 (DC)
0.4
0.01
0.2
TO-92 PD = 1W TC = 25C
TC = 25C 0.001 1 10 100 1000
0 0.001 0.01 0.1 1 10
VDS (volts)
tp (seconds)
3
VN0550
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
100 1.1 80
On-Resistance vs. Drain Current
VGS = 5V
BVDSS (normalized)
RDS(ON) (ohms)
60
VGS = 10V
1.0
40
20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5
Tj (C) Transfer Characteristics
0.5
ID (amperes) V(th) and RDS Variation with Temperature
1.4 1.8
VDS = 25V
0.4
RDS(ON) @ 10V, 50mA
VGS(th) (normalized)
25C
1.2
1.4
0.3
V(th) @ 1mA
1.0 1.0
150C
0.2
0.8
0.6
0.1 0.6 0 0.2
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts) Capacitance vs. Drain-to-Source Voltage
100 10
Tj(C) Gate Drive Dynamic Characteristics
VDS = 10V
8
f = 1MHz
75
105 pF
C (picofarads)
VGS (volts)
6
50
CISS
VDS = 40V
4
112 pF
25 2
COSS
CRSS
0 0 10 20 30 40
50 pF
0 0 0.2 0.4 0.6 0.8 1.0
VDS (volts)
QG (nanocoulombs)
4
RDS(ON) (normalized)
TA = -55 C
ID (amperes)
VN0550
TO-92 Package Outline
0.135 MIN 0.125 - 0.165 0.080 - 0.105 1 2 3
Bottom View
0.175 - 0.205 0.170 - 0.210 123
Seating Plane
0.500 MIN 0.014 - 0.022 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105
Front View
Side View
Notes: All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN0550 A042607
5

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